Research Areas Areas

    International Research Center Of Functional Materials and Devices of Optoelectronics and Electronics

    Development, creation and studying of functional materials with enhanced properties, including electrical and thermal conductivity, strength and durability

    Transnational Scientific and Educational UNIFEL Center for Advanced Methods of Materials Research

    The purpose of research is to develop new methods of studying the structure and functional properties of nanosystems with high spatial, energy and time resolution using a set of methods, including X-ray Free Electron Laser (european and other facilities of XFEL)

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      Last publications Publications

      2017 year
      • Prasolov N.D.

        Прасолов Н.Д.Molecular dynamics simulations of GaAs-crystal surface modifications during nanoindentation with AFM probe//Participant's Abstracts, IET - 2017, pp. 62

      • Liubimova I.., Kustov S.., Corro M.L., Torrens-Serra J.., Recarte V.., Perez-Landazabal J..

        Любимова Ю.В. Scaling of low field magnetoelastic hysteresis in antiferromagnetic Dy // MATERIALS PHYSICS AND MECHANICS - 2017, Vol. 32, No. 1, pp. 43-50

      • Kartasheva N.I., Liubimova I.., Salas D.., Kustov S..

        Kartasheva N.I., Liubimova I., Salas D., Kustov S. Dynamic magnetic characteristics during martensitic transformations in NiMnInCo metamagnetic shape memory alloy // Materials Today: Proceedings - 2017, Vol. 4, No. 3, pp. 4768-4772

      • Лещенко Е.Д., Дубровский В.Г.

        Неоднородное распределение легирующей примеси в III-V нитевидных нанокристаллах // Физика и техника полупроводников - 2017. - С. в печати

      • Мавлютов А.М., Латынина Т.А., Мурашкин М.Ю., Валиев Р.З., Орлова Т.С.

        Влияние отжига на микроструктуру и механические свойства ультрамелкозернистого технически чистого Al // Физика твердого тела - 2017. - Т. 59. - № 10. - С. 1949-1955

      • Kremleva A.V., Kirilenko D.A., Bougrov V.E., Romanov A.E., Nikolaev V.I., Odnoblyudov M.A.

        Extended defects in epitaxial layers of (AlxGa1-x)2O3 grown on sapphire substrates//29th International Conference on Defects in Semiconductors, IET - 2017

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